Location: State Ballroom | Raleigh Marriott City Center (Attached to the Raleigh Convention Center)
9:15 AM - 9:45 AMRegistration & Coffee
9:45 AM - 10:00 AMTutorial Introduction
10:00 AM - 11:00 AMSilicon Carbide Substrate Technologies: Advantages, Challenges, and Solutions
11:00 AM - 12:00 PMSiC Epitaxy Basics
12:00 PM - 1:00 PMLunch
1:00 PM - 2:00 PMSiC Power MOSFET Design from the Ground Up
2:00 PM - 3:00 PMSiC Fabrication in a Silicon Fab
3:00 PM - 3:30 PMBreak
3:30 PM - 4:30 PMRuggedness of Commercial SiC Power Devices: An Urgent Issue
4:30 PM - 5:15 PMHow SiC Power Devices Shape the Future of Power Electronics
5:15 PM - 6:00 PMOptimizing SiC MOSFET Chip and Packaging Design to Match Specific Application Requirements
7:00 PM - 9:00 PMWelcome Reception at the Raleigh Convention Center
7:00 PM - 9:00 PMWelcome Reception Ticket - Guest
9:00 AM - 11:00 AMOpening Plenary
11:00 AM - 11:30 AMBreak
11:30 AM - 1:00 PMQuantum Sensing
11:30 AM - 1:00 PMSensors & Novel Apps
1:00 PM - 2:30 PMLunch
2:30 PM - 4:00 PMAdvanced Features in SiC MOSFETs
2:30 PM - 4:00 PMEpitaxial Growth 1
4:00 PM - 4:15 PMBreak
4:15 PM - 5:30 PMPoster Session
5:30 PM - 6:00 PMBreak
6:00 PM - 8:30 PMIndustrial Session A
6:00 PM - 8:30 PMIndustrial Session B
8:30 AM - 10:30 AMBulk Growth 1
8:30 AM - 10:30 AMMOSFET Channel Optimization
10:30 AM - 11:00 AMBreak
11:00 AM - 12:30 PMEngineered Substrates
11:00 AM - 12:30 PMMOS Interface
12:30 PM - 2:00 PMLunch & Exhibits
2:00 PM - 4:00 PMCharacterization 1
2:00 PM - 4:00 PMHigh-T & Radiation Effects
4:00 PM - 4:30 PMBreak
4:30 PM - 6:30 PMPoster Session
8:30 AM - 10:30 AMCharacterization 2
8:30 AM - 10:30 AMSuperjunction & High-Voltage Devices
10:30 AM - 11:00 AMBreak
11:00 AM - 12:30 PMEpitaxial Growth 2
11:00 AM - 12:30 PMStress & Threshold Instabilities
12:30 PM - 2:00 PMLunch & Exhibits
2:00 PM - 4:00 PMContacts
2:00 PM - 4:00 PMExtended Defects 1
4:00 PM - 4:30 PMBreak
4:30 PM - 6:30 PMPoster Session
8:30 AM - 10:30 AMExtended Defects 2 (Stacking Faults)
8:30 AM - 10:30 AMNovel Device Architectures
10:30 AM - 11:00 AMBreak
11:00 AM - 12:30 PMQuantum Centers & Characterization
11:00 AM - 12:30 PMRadiation Effects & Superjunction
12:30 PM - 2:00 PMLunch & Exhibits
2:00 PM - 4:00 PMBulk Growth 2
2:00 PM - 4:00 PMDevice Characterization & Defect Impacts
4:00 PM - 4:30 PMBreak
4:30 PM - 6:30 PMPoster Session
7:00 PM - 10:00 PMGala Dinner (Ticket needed to enter)
8:30 AM - 10:30 AMEpitaxial Growth 3
8:30 AM - 10:30 AMIon Implantation
10:30 AM - 11:00 AMBreak
11:00 AM - 12:30 PMPoint Defects
11:00 AM - 12:30 PMReliability & Robustness
12:30 PM - 1:30 PMLunch
1:30 PM - 3:00 PMIntrinsic Properties
1:30 PM - 3:00 PMMOSFET Modeling
3:00 PM - 3:30 PMBreak
3:30 PM - 4:30 PMClosing Plenary & ICSCRM 2025 Preview