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Sep 29, 2024
Sep 30, 2024
Oct 1, 2024
Oct 2, 2024
Oct 3, 2024
Oct 4, 2024
Location: State Ballroom | Raleigh Marriott City Center (Attached to the Raleigh Convention Center)
9:15 AM - 9:45 AM
Registration & Coffee
9:45 AM - 10:00 AM
Tutorial Introduction
10:00 AM - 11:00 AM
Silicon Carbide Substrate Technologies: Advantages, Challenges, and Solutions
11:00 AM - 12:00 PM
SiC Epitaxy Basics
12:00 PM - 1:00 PM
Lunch
1:00 PM - 2:00 PM
SiC Power MOSFET Design from the Ground Up
2:00 PM - 3:00 PM
SiC Fabrication in a Silicon Fab
3:00 PM - 3:30 PM
Break
3:30 PM - 4:30 PM
Ruggedness of Commercial SiC Power Devices: An Urgent Issue
4:30 PM - 5:15 PM
How SiC Power Devices Shape the Future of Power Electronics
5:15 PM - 6:00 PM
Optimizing SiC MOSFET Chip and Packaging Design to Match Specific Application Requirements
7:00 PM - 9:00 PM
Welcome Reception at the Raleigh Convention Center
7:00 PM - 9:00 PM
Welcome Reception Guest Ticket (Intended for those not registered for the Full Conference. For example, a spouse or friend.)
9:00 AM - 11:00 AM
Opening Plenary
11:00 AM - 11:30 AM
Break
11:30 AM - 1:00 PM
Quantum Sensing
11:30 AM - 1:00 PM
Sensors & Novel Apps
1:00 PM - 2:30 PM
Lunch
2:30 PM - 4:00 PM
Advanced Features in SiC MOSFETs
2:30 PM - 4:00 PM
Epitaxial Growth 1
4:00 PM - 4:15 PM
Break
4:15 PM - 5:30 PM
Poster Session
5:30 PM - 6:00 PM
Break
6:00 PM - 8:30 PM
Industrial Session A
6:00 PM - 8:30 PM
Industrial Session B
8:30 AM - 10:30 AM
Bulk Growth 1
8:30 AM - 10:30 AM
MOSFET Channel Optimization
10:30 AM - 11:00 AM
Break
11:00 AM - 12:30 PM
Engineered Substrates
11:00 AM - 12:30 PM
MOS Interface
12:30 PM - 2:00 PM
Lunch & Exhibits
2:00 PM - 4:00 PM
Characterization 1
2:00 PM - 4:00 PM
High Temperature Operation & Radiation Effects
4:00 PM - 4:30 PM
Break
4:30 PM - 6:30 PM
Poster Session
8:30 AM - 10:30 AM
Characterization 2
8:30 AM - 10:30 AM
Superjunction & High-Voltage Devices
10:30 AM - 11:00 AM
Break
11:00 AM - 12:30 PM
Epitaxial Growth 2
11:00 AM - 12:30 PM
Stress & Threshold Instabilities
12:30 PM - 2:00 PM
Lunch & Exhibits
2:00 PM - 4:00 PM
Contacts
2:00 PM - 4:00 PM
Extended Defects 1
4:00 PM - 4:30 PM
Break
4:30 PM - 6:30 PM
Poster Session
8:30 AM - 10:30 AM
Extended Defects 2 (Stacking Faults)
8:30 AM - 10:30 AM
Novel Device Architectures
10:30 AM - 11:00 AM
Break
11:00 AM - 12:30 PM
Quantum Centers & Characterization
11:00 AM - 12:30 PM
Radiation Effects & Superjunction
12:30 PM - 2:00 PM
Lunch & Exhibits
2:00 PM - 4:00 PM
Bulk Growth 2
2:00 PM - 4:00 PM
Device Characterization & Defect Impacts
4:00 PM - 4:30 PM
Break
4:30 PM - 6:30 PM
Poster Session
7:00 PM - 10:00 PM
Gala Dinner Guest Ticket (Intended for those not registered for the Full Conference. For example, a spouse or friend.)
7:00 PM - 10:00 PM
Gala Dinner (Ticket needed to enter)
8:30 AM - 10:30 AM
Epitaxial Growth 3
8:30 AM - 10:30 AM
Ion Implantation
10:30 AM - 11:00 AM
Break
11:00 AM - 12:30 PM
Point Defects
11:00 AM - 12:30 PM
Reliability & Robustness
12:30 PM - 1:30 PM
Lunch
1:30 PM - 3:00 PM
Intrinsic Properties
1:30 PM - 3:00 PM
MOSFET Modeling
3:00 PM - 3:30 PM
Break
3:30 PM - 4:30 PM
Closing Plenary & ICSCRM 2025 Preview
For additional agenda details, please visit the
Program Index
.