This study reports on the challenges and advancements in developing 200 mm-diameter 4H-SiC crystals utilizing the high-temperature chemical vapor deposition (HTCVD) method, significantly enhanced by process informatics (PI). While enlarging the diameter of SiC crystals presents substantial cost benefits and other advantages, it introduces complex challenges in process optimization and control. Particularly, larger-diameter crystals require stringent control over temperature fields to avoid stress-induced cracking. To overcome this issuse, we have introduced and developed PI technologies—including optimization, machine learning, and computational aided engineering (CAE). By applying our proprietary algorithms for optimizing the structural parameters of the growth furnace, we successfully achieved a 200 mm-diameter 4H-SiC crystal with a maximum growth rate exceeding 1.5 mm/h and a growth length over 10 mm, without any cracks, all within a remarkably short development period.