We investigated how proton implantation has an effect on electrical characteristics of 4H-SiC MOSFETs. Bipolar degradation in silicon carbide (SiC) is the key issue for utilizing the bipolar operation in SiC power devices. Suppression of bipolar degradation with proton implantation technique has been reported recently. If we can apply such a new technique to SiC MOSFETs, it would provide the way to take advantage of the body diode of SiC MOSFET. Thus, we fabricated and evaluated huge numbers (about 4,000 chips) of proton implanted 4H-SiC MOSFETs to verify statistically its effectiveness on the suppression of the bipolar degradation as well as to consider its technological applicability to their mass production process. We found that the implantation of proton as much as 1e14 cm-2 has almost no effect on the 1st and the 3rd quadrant static characteristics of the SiC-MOSFETs at room temperature. Furthermore, our statistical investigation revealed that the suppression ratio of the increase in on-resistance is more pronounced by higher dosage of proton.