The large work function of p-type SiC makes it difficult to form low-resistivity ohmic contacts. In terms of semiconductor physics, a metal with a large work function, which forms a small Schottky barrier on p-type SiC, should be adopted for ohmic contacts on p-type SiC. One of such metals is Pt, and there have been several studies on Pt-based ohmic contacts on p-type SiC. However, most of them are based on high-temperature annealing, which is similar to the current typical process to form Ti/Al-based ohmic contacts on p-type SiC. Since such high-temperature annealing causes various negative effects including electrode melting and surface roughness, it is important to develop a low-temperature process. In this study, current–voltage (I–V) characteristics, barrier height, and contact resistivity of the Pt electrodes formed on p-type SiC followed by annealing were systematically investigated by varying the annealing temperature. An ohmic I–V curve with contact resistivity of 3.2×10^-5 Ωcm^2 is demonstrated by 600°C annealing.