1: Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate; An Min Amanda Lee; SiC Defect Characterization
2: Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB; Annalisa Cannizzaro; SiC Defect Characterization
3: Nanoscale infrared polytype layer analysis and charge carrier profiling; Dario Siebenkotten; SiC Defect Characterization
4: DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing; Enrica Cela; SiC Defect Characterization
5: Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers.; Jimmy Thörnberg; SiC Defect Characterization
6: Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data; Marshall Wilson; SiC Defect Characterization
7: Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer; Moonkyong Na; SiC Defect Characterization
8: Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type 4H-SiC; Orazio Samperi; SiC Defect Characterization
9: Nanoscale infrared spectroscopic characterization of threading dislocations in SiC; Scott Criswell; SiC Defect Characterization
10: Characterization of Void Defects in PVT-Grown 4H-SiC Crystals; Yafei Liu; SiC Defect Characterization
11: Numerical analysis of correlation between UV irradiation and current injection on bipolar degradation in PiN diodes; Yasuyuki Igarashi; SiC Defect Characterization
12: Mechanical Behavior of CVD-grown Tantalum Carbide (TaC) Coatings on Graphite Substrates; Yvonne Dieudonné; SiC Defect Characterization
13: Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs); Jae Hwa Seo; SiC Device Design and Characterization
14: Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions; Jeong Hyun Moon; SiC Device Design and Characterization
15: 2.0 kV 4H-SiC TMBS Embedded UMOSFET; Jia-Wei Hu; SiC Device Design and Characterization
16: Superjunction implementations within a 4H-SiC double trench MOSFET structure; Peter Gammon; SiC Device Design and Characterization
17: Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001); Shinji Kamihata; SiC Device Design and Characterization
18: Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs; Sosuke Horiuchi; SiC Device Design and Characterization
19: Effect of Chip Size on Reverse Recovery of SiC MOSFETs with Edge Termination; Yeonjun Kim; SiC Device Design and Characterization
20: Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface; Yoshitaka Kimura; SiC Device Design and Characterization
21: Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths; Young-Hun Cho; SiC Device Design and Characterization
22: Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics; Youngjae Park; SiC Device Design and Characterization
23: Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC; Bowen Dong; SiC Material Growth
24: Epitaxial SiC Development for Young's Modulus Improvement; Brenda Vanmil; SiC Material Growth
25: Graphite an Enabler for Single Crystal SiC Growth; Joseph Abrahamson; SiC Material Growth
26: Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor; Jürgen Erlekampf; SiC Material Growth
27: The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal defects; Kohei Toda; SiC Material Growth
28: Optimization of SiC growth processes by using insights of inductive SiC inspection; Michael Hofmann; SiC Material Growth
29: Filling-design effect of powder source in the crucible on SiC single-crystal growth; Min Gyu Kang; SiC Material Growth
30: Development and scale-up of 200mm 4H SiC crystals; Taehee Kim; SiC Material Growth
31: A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process; Tawhid Rana; SiC Material Growth
32: Factors to determine resistance characteristics of semi-insulating SiC single crystal; Woo Yeon Kim; SiC Material Growth
33: The Doping Concentration Study of 4H-SiC Epitaxy with Nitrogen and Ammonia/Hydrogen Mixed Gas as Dopant; Yuebin Han; SiC Material Growth
34: Integrated Approach to SiC Crystal Growth: Multiphysics Modeling and Chemistry Assessment in PVT Furnaces; Zaher Ramadan; SiC Material Growth
35: Impact of Gate Switching Instability in SiC MOSFETs Application Performance Degradation During Hard Switching Conversion; Andrea Piccioni; SiC Packaging, Reliability and Systems
36: Latching current limiter for high-power distribution in space enabled by SiC N-MOSFET; Antxon Arrizabalaga; SiC Packaging, Reliability and Systems
37: TDDB and HTGB Study of SiC MOSFET with Excessive Channel Leakage; Shuoben Hou; SiC Packaging, Reliability and Systems
38: Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient; Vuong Van Cuong; SiC Packaging, Reliability and Systems
39: Monolithic fabrication of 4H-SiC micromechanical devices by electrochemical etching and characterization of vibrational modes; André Hochreiter; SiC Quantum Properties and Applications
40: SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity; Daniel Habersat; SiC Quantum Properties and Applications
41: Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis; Daniel Hart; SiC Quantum Properties and Applications
42: Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers; Enora Vuillermet; SiC Quantum Properties and Applications
43: NZFMR Magnetometry up to 500C Using SiC devices; Fabrizio Sgrignuoli; SiC Quantum Properties and Applications
44: Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology; Peter A. Stuermer; SiC Quantum Properties and Applications
45: Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform; Shanying Cui; SiC Quantum Properties and Applications
46: Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates; Connor Horn; Silicon Carbide Device Fabrication
47: Monitoring of dose, temperature, and energy-dependent damage in Al implanted 4H-SiC by UV photo-modulated reflectance measurement; Ha Bin Jeong; Silicon Carbide Device Fabrication
48: Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction; Kai-Wen Hsu; Silicon Carbide Device Fabrication
49: Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices; Ludovico Megalini; Silicon Carbide Device Fabrication
50: A New Era of 8" Silicon-Carbide Wafering; Malte Mueller; Silicon Carbide Device Fabrication
51: Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates; Min Jae Kang; Silicon Carbide Device Fabrication
52: Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse; Pablo Guimerá Coll; Silicon Carbide Device Fabrication
53: Vth behavior by different barrier metals at positive bias HTGB & negative bias HTGBx; Sanghong Park; Silicon Carbide Device Fabrication
54: Effect of intervening layer insertion on Φb reduction in TiN Schottky; Shigeaki Takagi; Silicon Carbide Device Fabrication
55: Evaluation of interface state density in ultrathin SiO2/SiC MOS structures utilizing self-assembled monolayers; Takuji Hosoi; Silicon Carbide Device Fabrication
56: The investigation of effective thermal oxidation to SiC MOSFET gate oxide quality improvement; Youngbin Im; Silicon Carbide Device Fabrication