Carrier transport properties such as mobility and drift velocity are the basic information of materials to predict the device performance and to understand the physical phenomena. Although the mobility in SiC has been intensively studied including its anisotropy, the previous research on the high-field drift velocity is limited to the in-plane direction of the c-face, and there are few reports on that along the c-axis. In this study, the authors determined the electron drift velocities parallel and perpendicular to the c-axis over a wide electric field range (1 – 200 kV/cm) by a conductance technique using SiC(11-20) samples and discussed its anisotropy.