This study involves energy-filtered ion implantation (EFII) to explore pinning effect using Nitrogen ion for suppressing REDG caused by BPDs/converted BPDs/SF and precise doping of the entire drift region in one step. This presents a significant advantage over the earlier methods in immobilizing the nucleation sites in the entire implantation region, enhancing the reliability and production feasibility of power devices for mass production. This study employs optical excitation method using UV to investigate 1SSF expansion, which is the basic cause for bipolar degradation, governed by the recombination-enhanced dislocation glide (REDG) mechanism.