In overcurrent turn-off events, the SiC MOSFET can be subjected to excessive current levels beyond its rated specification. In this work, the overcurrent turn-off robustness limit of SiC MOSFETs from three manufacturers (M1, M2 and M3) was studied up to very high turn-off currents to find the destruction and failure type. All the devices were able to withstand higher overcurrent turn-off and a positive gate-source voltage in the range of 42V to 53V. The main failure for all the devices was the gate damage, indicated by increased gate leakage current. Further, the impact of the negative gate-source voltage on the overcurrent turn-off ruggedness strongly varies for different manufacturers. The SiC MOSFETs can withstand very high positive gate-source voltages under overcurrent turn-off without any degradation in their electrical parameters up to their critical limit.