Victor Veliadis – PowerAmerica, Welcome remarks
Dr. Sei-Hyung Ryu – Wolfspeed, “Silicon Carbide MOSFETs: A Device Designer's Perspective”
Mr. Makoto Yoshimura - TMEIC Corporation, “Latest Power Electronics Technology with SiC Devices to Realize a Carbon-Neutral Society”

10:45 AM - 11:00 AM - Invited Posters

• Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth; Yunji Shin
• Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation; Shunta Harada
• SiC Plasma Dicing for Future High Yield Die Singulation; Ben Jones
• Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate; Yuta Higashi