Name
Mobility enhancement in SiC n- and p-channel MOSFETs (invited)
Description
In spite of extensive studies on SiC MOSFETs, SiC n-channel MOSFETs still suffer from the low channel mobility and the channel resistance is dominant especially in commercially available 600 and 1200 V-class MOSFETs. In recent years, SiC CMOS has attracted much attention for ICs operating under harsh environment, where performance improvement of not only n-channel but also p-channel MOSFETs is crucial. In this paper, recent studies on mobility enhancement in SiC n- and p-channel MOSFETs including the authors’ group are presented.
Speakers
Mitsuaki Kaneko - Kyoto University
Date
Tuesday, October 1, 2024
Time
8:40 AM - 9:10 AM
Location Name
Room 306
Track
MOSFET Channel Optimization