Name
Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET
Description
Power devices for space applications require high single-event effect (SEE) tolerance. However, in SiC devices, the tolerance for a specific SEE, namely, the single-event leakage current (SELC). In this study, we fabricated a SiC trench MOSFET with improved gate-source SELC tolerance. From the result of heavy ions irradiation tests, it is proved that our developed device improved gate-source SELC tolerance. Based on the device simulation, the detail of SELC mechanism is also proposed.
Speakers
Eiji Kagoshima - MIRISE Technologies Corporation
Date
Tuesday, October 1, 2024
Time
3:00 PM - 3:20 PM
Location Name
Room 306
Track
High Temperature Operation & Radiation Effects