Transfer of high-quality graphene from its growth substrate to substrates of technological interest can be necessary to enable its use in certain applications, however it remains challenging to achieve large-area transfer of graphene that is clean and intact. This work utilizes a dry transfer technique in which an adhesive metal stressor film is used to exfoliate epitaxial graphene from SiC(0001) [1]. In this method, the strain energy in the metal film must be high enough to allow for uniform exfoliation, but low enough such that self-exfoliation of graphene does not occur. We investigate the dry transfer of monolayer epitaxial graphene (MEG) and hydrogen-intercalated, quasi-freestanding bilayer graphene (QFBEG) grown by sublimation of Si from nominally on-axis 6H-SiC(0001) in a CVD reactor in Ar ambient. A magnetron sputtered Ni stressor layer is used to exfoliate epitaxial graphene and transfer to GaAs, glass, and SiO2/Si substrates. The Ar pressure during sputtering is found to impact the stress, film density, and roughness of the Ni film, as determined from wafer curvature and X-ray reflectivity (XRR) measurements. By using appropriate sputtering conditions, the Ni/graphene film exfoliates from the entire area of the SiC substrate with use of thermal release tape. Atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and Nomarski microscopy are used to characterize the graphene. The Ni 2p peak was not detected in XPS of the transferred graphene after removal of the Ni film by etching in acid. Additionally, XPS revealed minimal oxide present at the graphene-GaAs interface, consistent with previous reports for this dry transfer method [2]. Raman spectroscopy mapping showed that predominately monolayer graphene is transferred from MEG, while predominately bilayer graphene is transferred from QFBEG. Raman spectroscopy of the SiC substrate after MEG exfoliation shows the 6√3 buffer layer that forms during growth on SiC(0001) remains on the SiC substrate. Consequently, if there are regions of exposed 6√3 buffer layer in the as-grown MEG on SiC, AFM shows that there are corresponding gaps in the transferred graphene film where the areas of exposed buffer layer do not transfer. The 6√3 buffer layer is not present in QFBEG due to the hydrogen-intercalation process. It is found that the same Ni sputtering conditions that led to uniform exfoliation and transfer of MEG result in micron-scale tears in the Ni/QFBEG film. By lowering the strain energy in the sputtered Ni film, these tears can be reduced or eliminated. [1] Kim, J., et al., Science, 342, 833 (2013). [2] Kim, H., et al., ACS Nano, 15, 10587 (2021).