Name
Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC
Description
The strain induced by thermal oxidation and ion implantation on a series of samples is studied via a Raman spectroscopy analysis. The results show that both thermal oxidation and ion implantation induce a tensile stress on the SiC crystal. New Raman modes were also observed after ion implantation and thermal oxidation.
Speakers
Helton Goncalves de Medeiros - APS - ETH Zurich
Date
Friday, October 4, 2024
Time
9:30 AM - 9:50 AM
Location Name
Room 306
Track
Ion Implantation