Multiple commercial platforms are now available for silicon carbide (SiC) epitaxy on 200mm wafers. Improvements in 200mm wafer quality and quantity have accelerated the need to evaluate different platforms for quality, throughput, cost of ownership, and ultimately device yields. In preparation for high volume manufacturing at the John Palmour Manufacturing Center (The JP), Wolfspeed has been evaluating different reactor platforms across our current and future device portfolios. Conventional wisdom suggests that thicker epitaxial layers will be more challenging on thinner wafers with respect to shape and defectivity metrics. In this report we will share relative comparisons of thickness and doping uniformity, defectivity, and other parameters critical to meeting device requirements on 350um and 500um thick 200mm wafers. Initial results at 13um show thinner substrates will not be problematic for epitaxial growth, but stress-induced basal plane dislocations (BPDs) and other defects are expected to reduce usable area on wafers with increasing growth. Trends in wafer shape and defect evolution for epitaxial thicknesses of up to ~100um will be compared for doping levels relevant for high voltage devices. Additional metrology and comparisons will be provided where possible for potential offsets observed in both wafer thickness and/or platform dependencies.