Silicon Carbide (SiC), a wide bandgap semiconductor material, has attracted worldwide attention in power MOSFETs with distinct properties, such as low leakage current, high operating temperatures, and a high critical electric field. A precise compact model for a SiC power MOSFET is crucial to validating those benefits in power electronics applications using circuit simulations. Here we introduce a SPICE model for a SiC power MOSFET, designed with physics-based sub-circuit components. A planar SiC vertical power MOSFET structure is decomposed into sub-circuit components such as n-channel MOSFET (nMOS), junction-FET (JFET), and drift resistor (RDrift) as shown in Fig. 1. The components provide current-voltage simulations, which are used to define physics-based SPICE model parameters of the sub-circuit model components (Fig. 2). As shown in Fig. 3, the nMOS is represented by a BSIM3 component, where the modeling of the transconductance is important to determine static and dynamic simulations. The JFET is expressed as a two-terminal resistor (RJFET) based on the TCAD-based physical parameters of doping concentration, channel area (JFET area), and electron mobility. The RDrift is calculated based on TCAD calibration, which is independent of the junction capacitance. A Compact Model Coalition (CMC) model represents the body diode in the SPICE model. Cgs, Cgd, and Cds are analytically interpreted to capture gate and drain-bias dependence. In the SPICE model, p-well resistors are incorporated at the connection between the nMOS and the body diode, influencing the nMOS threshold voltage due to MOSFET body effect [5]. Based on TCAD analysis and physics-based understanding of the power MOSFET structure, the physics-based SPICE sub-circuit components are developed to represent device behaviors for junction temperature ranging from 25℃ to 175℃. In the switching simulations (shown in Fig. 4), the turn-on, miller plateau, and turn-off transient behaviors are analyzed with each component model characteristic, enabling the regulation of the power switching performance via physics-based parameters such as channel mobility, SiC doping concentration, and junction capacitances. In summary, we analyzed the planar SiC power MOSFET structure using TCAD and translated into the physics-based SPICE model. In the full paper, the TCAD-based sub-circuit components used for the development of the SPICE components will be discussed in detail. The switching transient simulations provide the relationship between temperature and the time derivative of the drain-source voltage (dV/dt). The proposed SPICE model enables computationally-efficient and physically meaningful electrical characteristics, providing the potential to explore further applications of SiC power MOSFETs.