Name
Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation
Description
Bipolar degradation poses a critical challenge in SiC devices, driven by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations (BPDs). This study investigates the effects of helium implantation on the suppression of 1SSFs expansion. Experimental results demonstrate that the expansion of stacking faults was suppressed by helium implantation. We consider that the BPDs were immobilized by presence of point defects introduced by implantation.
Speakers
Masashi Kato - Nagoya Institute of Technology
Date
Friday, October 4, 2024
Time
8:50 AM - 9:10 AM
Location Name
Room 306
Track
Ion Implantation