Name
Monte Carlo analyses on impact ionization coefficients in 4H-SiC (invited)
Description
The impact ionization coefficient of carriers is an important physical property for predicting and designing the breakdown voltage of power devices. This study theoretically investigates the behaviors of the impact ionization coefficients in 4H-SiC, including their anisotropy and temperature dependence, by full-band Monte Carlo simulations. The mechanisms behind these properties are discussed focusing on the band structures and the carrier distribution functions.
Speakers
Hajime Tanaka - Osaka Univ.
Date
Friday, October 4, 2024
Time
1:30 PM - 2:00 PM
Location Name
Room 305
Track
Intrinsic Properties