In this work, we discuss the radiation damage studies of a new, large area, p-n junction silicon carbide device developed by the SiCILIA collaboration. We have studied the general performances of several devices, as a function of fluence, irradiated in different experimental conditions with different beams. A standard p-n junction silicon detector was also irradiated for comparison. The new detectors manifest excellent performance in terms of stability of the main parameters, linearity, defect distribution, charge collection efficiency, energy resolution, leakage current, etc. Experimental results evidence a radiation resistance of SiC devices more than two order of magnitude higher than Si devices. The new construction technology applied to silicon carbide material has made it possible to create very robust devices with excellent performance.