Previous studies have shown that charge pumping electrically-detected magnetic resonance (CP-EDMR) is a powerful technique for detecting paramagnetic point defects at the SiC-SiO2 interface of a lateral n-type 4H-SiC MOSFET [1-3]. In this technique, the spin dependent CP recombination current (Icp) is generated from the source and drain to the body of the device by applying an oscillating voltage to the gate [4-5]. As a result, point defects at the interface are alternately filled with holes (accumulation) and electrons (inversion), when the gate voltage oscillates, with a given CP frequency fcp between a base voltage (Vbase) and Vbase + Va, with Va the amplitude of the CP experiment. A CP current is then generated when a trapped hole recombines with an electron at the interface, or vice versa. In CP-EDMR, the CP current is monitored while performing an EDMR experiment. In this case, the MOSFET is placed in the microwave cavity (X-band) of an electron paramagnetic resonance setup, and continuously exposed to microwave radiation with a fixed frequency while sweeping a magnetic field. Upon magnetic resonance, i.e. when the microwave energy matches the energy difference between the spin up and spin down level of the trapped electron/hole, a spin flip occurs which can then change the CP current. This is because recombination can only occur for electron/hole pairs with opposite spins, therefore spin flips can either increase or decrease the recombination rate which is directly reflected in a change of the CP current [6]. These changes can then be measured as a function of applied magnetic field. Since the CP current itself is dependent on Vbase, also the CP-EDMR signal intensity, i.e. the change in the CP current upon magnetic resonance will depend on Vbase. A close correlation between both was reported in previous work [1], which in this work is investigated in more detail. In Figure 1, we present the CP current (in blue) and the corresponding CP-EDMR signal intensity (in red), using sinusoidal CP modulation at a frequency fcp = 313 kHz. Although the regions with CP and CP-EDMR signals overlap each other, the CP-EDMR curve is shifted to lower Vbase indicating that the signal primarily originates from recombination of trapped holes with electrons. Such a shift has recently also been observed in vertical-diffused (VD) MOSFETs [7]. Moreover, and different from CP, the CP-EDMR curve shows two distinct maxima at Vbase = −14 V and −12 V. Interestingly, when doing the same experiments at lower CP frequencies (fcp = 13 kHz), the difference between the CP and CP-EDMR curves becomes very pronounced, with the latter showing a sharp intensity decrease around Vbase = −14 V, as shown in Figure 2. A more in-depth investigation reveals that the CPEDMR signal results from the competition between two different signals, originating from two distinct point defects: for one defect the CP current increases on resonance, while it decreases for the other one (Figure 4). This signal inversion is clearly shown in Figure 3, where the change in CP current is measured directly (i.e. without field modulation) upon magnetic resonance for selected Vbase values left and right of the minimum. When examining the two CP-EDMR spectra recorded in these conditions, a clear difference can be observed in their hyperfine structure (red and blue arrows in Figure 5). In conclusion, these results demonstrate selectivity in CP-EDMR for detection of two defects based on the trap energy as well as on the (positive or negative) response to magnetic resonance, which will be discussed in more detail. Also, CP-EDMR at high and low CP frequencies shows interesting qualitative differences that may related to defect and device properties, calling however for further analysis and interpretation.