Name
Heavy-ion irradiation effects in 4H-SiC unipolar devices (invited)
Description
The use of silicon carbide (SiC) power devices in space is limited by their sensitivity to the radiation environment, which increases the risk of single event effects (SEEs). This work focuses on the basic mechanisms of damage induced by heavy-ion irradiation in 4H-SiC unipolar devices.
Speakers
Corinna Martinella - APS - ETH Zurich
Date
Thursday, October 3, 2024
Time
11:00 AM - 11:30 AM
Location Name
Room 306
Track
Radiation Effects & Superjunction