Experimental depth profiles measured by Secondary Ion Mass Spectrometry (SIMS) confirmed successful channeling implantations and were compared to Monte Carlo Binary Collision Approximation (MC-BCA) simulations performed in Synopsis Sentaurus TCAD. A significant discrepancy was observed in the depth profiles for energies above 10 MeV between the SIMS results and those predicted by TCAD simulations. This indicates that the commonly used physical models for describing the ion track need to be revised and calibrated for this high-energy range. By utilizing SIMS measurements alongside simulation algorithms such as TCAD Sentaurus (Synopsis) and SIIMPL, critical model parameters essential for high-energy implantation simulations can be identified. The goal is to understand their effect in the high-energy range and gain insight into the underlying physical phenomena governing ion interaction with the semiconductor crystal at such kinetic energies.