Two-dimensional silicon carbide (2D SiC) has received significant attention recently, with various theoretical studies delving into the structure and fundamental properties of both 2D SiC and its nonstoichiometric counterparts. This rapidly increasing interest comes from the immense potential and promises that such materials hold for several applications including power electronics, optoelectronic and photonic applications, among many others. Owing to its reduced thickness, 2D SiC possesses a unique combination of physical and chemical properties (e.g., direct band gap, enhanced photoluminescence, and variouse non-linear optical properties) that are absent in bulk SiC. Further, one of the most significant advantages of 2D SiC over any other 2D material is its expected high-temperature capabilities, as silicon carbide can tolerate high temperatures and extreme environments. These characteristics are critical for many applications and make SiC nanosheets a potential game-changer for future semiconductors.[1–4] In addition to SiC nanosheets, other low-dimensional silicon carbide structures such as one dimensional SiC nanowires, and nonstoichiometric SixCy[3] nanosheets offer several unique structural and physical properties and provide superior materials control and device flexibility and scalability compared to bulk SiC. They enable ultimate scaling. Because of their reduced thickness and quantum confinement effects, low dimensional silicon carbide materials enable the fabrication of smaller, thinner, denser, and more flexible SiC electronic and optoelectronics devices, as well as novel device concepts. Or in the case of quantum applications, these emerging nano materials are expected to enable deterministic placement of color centers at the level of nanometers or angstroms. Low dimensional SiC semiconductors are also useful for sensing applications and as well as extreme environments, where many components, including silicon, fail at high temperatures or harsh environment. This presentation, thus, focuses on our ongoing experimental work on low dimensional silicon carbide, aiming to inspire more experimental and theoretical works into these emerging nano semiconductors. We will present our recent data from 1D and 2D SiC materials and devices. Both liquid exfoliation and chemical vapor deposition methods have been used for materials preparations. Fig. 1. shows schematics of chemical structures of 2D SiC and the calculated phonon band energy. Fig. 2 presents results from transmission electron microscopy (TEM) and other structural characterizations, and figures 3 and 4 show our recent electrical measurements from both SiC nanowire and SiC nanosheet. In summary, we fabricated and tested novel low diemnsional silicon carbide. Our experimental findings validated the existing theoretical studies and demonstrated the feasibility of developing and testing SiC nanosheets optical and electrical devices and shows that the 2D/1D-nature of these nanosheets/nanosheets opens several possibilities for future silicon carbide technologies. These results will benefit further optimization of SiC technologies through integrating low dimensional materials.