Irradiation of semiconductor substrates by medium to high energy protons is a well-established technique useful for localized control of doping concentration and charge carrier lifetime. While in the past decades it has been extensively used in silicon-based electronics engineering, it still represents matter of discussion in relation to the new generation wide band-gap materials, such as 4H-SiC (silicon carbide). Proton irradiation of 4H-SiC leads to formation of electrically active defects, where those associated with the carbon vacancy (VC) have been identified as the main electron lifetime killers [1, 2]. Intentional creation/annihilation of charge carrier traps, a practice known as defect engineering, is becoming an integral part of 4H-SiC based power device manufacturing process as it enables precise control of electrical properties in ultimate devices. An aspect that has not yet been explored in detail is the control of implantation profile shape in channeling proton implants. The 4H-SiC has been found highly suitable for channeling implantation of conventional dopants (like B, N, Al, P) [3], giving access to box-shaped doping profiles with lower amount of irradiation induced damage. While analogous results are expected for protons, and there is a quite significant interest in developing this technology for defect engineering purposes, to date there are no consistent data in the literature concerning with channeling implantation of protons in 4H-SiC substrates. In this study, the effects of ion channeling on the depth distribution of medium energy proton implants in epitaxial 4H-SiC were investigated. N-type 4H-SiC epilayer, grown on the (0001) plane, with a nominal off-cut angle of 4° toward the [1120] direction, was implanted with 350 keV protons, with beam alignment ranging from [0001] channeling direction to random conditions. Samples were aligned and implanted in an RBS chamber, using low to medium doses of protons. Hydrogen depth profiles of medium dose implants (5e14 cm-2) were successfully measured by Dynamic SIMS, by applying the pre-sputtering method described in [4, 5, 6]. Defect depth profiles of Z1/2 (VC) and S1 (VSi) electron traps of low dose implants (5e9 cm-2) were measured by Deep Level Transient Spectroscopy (DLTS). Electrical and elemental depth profiles were then combined to obtain information about the effect of ion channeling on the generation of defects in the implanted volume. The obtained results show that channeling implantation of protons in high quality 4H-SiC epilayers produces a very low degree of damage, minimizing the occurrence of the random peak and leaving the channeled region relatively free of defects. Such features make the technique suitable for discrete profile shape adjustments and peak depth control by only playing on the beam alignment conditions, thus representing a valuable means for high precision localized in-depth control of defects.