Name
An approach on the void-free refill of 4H-SiC trench by CVD
Description
To address the issue of voids-defects, this study aimed to identify the cause of voids generation by surveying the position and shape of voids near the ends of CVD-filled SiC trenches. Additionally, we proposed a novel trench pattern design aimed at preventing the occurrence of voids-defects."
Speakers
Kazutoshi Kojima - National institute of industrial science and technology (AIST)
Date
Wednesday, October 2, 2024
Time
11:10 AM - 11:30 AM
Location Name
Room 305
Track
Epitaxial Growth 2