Name
Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces
Description
In 4H-SiC crystals, electron mobility exhibits an anisotropy. The electron mobility along c-axis is higher than that for perpendicular to c-axis, which is a beneficial relationship for a low on-resistance vertical power device fabrication. However, a different anisotropy has been reported for MOS channels on (11-20) a-face and (01-10) m-face, and the mechanism has not yet been clarified. In this study we found that MOS channels fabricated on semi-polar crystal faces exhibit a different anisotropy from conventional non-polar crystal faces.
Speakers
Hirohisa Hirai - AIST
Date
Tuesday, October 1, 2024
Time
9:10 AM - 9:30 AM
Location Name
Room 306
Track
MOSFET Channel Optimization