In this work, for radiation hardened image sensor, SiC CMOS active pixel sensors (APS) with embedded UV photodiode was suggested and demonstrated. In our previous study on the SiC CMOS image sensor, after high gamma-ray radiation of 2 MGy, the radiation effect on the device was mainly caused at the surface of SiC photodiode. In this work, we introduced an embedded photodiode in 4H-SiC CMOS APS for preventing radiation effects at the interface. And then high quantum efficiency of 85% was achieved. We fabricated 4H-SiC APS with the embedded PD, and these devices were successfully demonstrated.