1: Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards; Jake Soto; SiC Defect Characterization
2: Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions; Melissa Lucia Scalisi; SiC Defect Characterization
3: Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence; Moonkyong Na; SiC Defect Characterization
4: Defects characterization and mitigation through the trench gate patterning process; Remi Le Tiec; SiC Defect Characterization
5: High Spatial Resolution Analysis of Dislocations in 4H-SiC Using Low Accelerating Voltage Scanning Electron Microscope (SEM)-Cathodoluminescence (CL); Shunsuke Asahina; SiC Defect Characterization
6: Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes; Tae-Hee Lee; SiC Defect Characterization
7: Hydrogen and point defect introduction into 4H-SiC by plasma treatment; Masashi Kato; SiC Defect Characterization
8: The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates; Yuta Nakajima; SiC Defect Characterization
9: Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor; Dominique Planson; SiC Device Design and Characterization
10: A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching Performances; Dumitru-Gheorge Sdrulla; SiC Device Design and Characterization
11: A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics; Dusan Baek; SiC Device Design and Characterization
12: Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures; Min-Yeong Kim; SiC Device Design and Characterization
13: Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering; Nicolo Piluso; SiC Device Design and Characterization
14: Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs; Shih-Chiang Shen; SiC Device Design and Characterization
15: SiC Schottky-barrier diode without ion-implanted P-type regions; Sima Dimitrijev; SiC Device Design and Characterization
16: Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs; Xue-Fen Hu; SiC Device Design and Characterization
17: Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications; Andrea Severino; SiC Material Growth
18: 200mm n-type SiC Uniform Low BPD in Their Whole Crystal Technology; Ching Shan Lin; SiC Material Growth
19: A Novel Approach for the Volume Production of Wide-Bandgap Semiconductor; Ghassan Barbar; SiC Material Growth
20: Effect of temperature and substrate morphology on the deposition and growth of silicon carbide on a 4H-SiC substrate; Kevin Kayang; SiC Material Growth
21: Active planarization method from rough surface of 4º-off 4H-SiC (0001) controlled by step bunching and debunching mechanism using Dynamic AGE-ing®; Kohei Toda; SiC Material Growth
22: Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks; Muhammad Ali Johar; SiC Material Growth
23: Process gas control for growth of high-resistant HPSI-SiC crystal; Seung-June Lee; SiC Material Growth
24: Optimization of heat transfer design for high quality 4H-SiC ingot growth; Seung-June Lee; SiC Material Growth
25: Advanced diagnostics for rapid process development; Slobodan Mitic; SiC Material Growth
26: Study on growth of 8inch SiC substrate with ultra-low dislocation density; Yan Peng; SiC Material Growth
27: Late News: Liquid Metal Interconnects for SiC MOSFETs; Nick Baker; SiC Packaging, Reliability and Systems
28: Analysis of Ohmic contacts simultaneously formed on both n-type and p-type 4H-SiC; Atsushi Shimbori; Silicon Carbide Device Fabrication
29: Effects of sulfurization on the properties of 4H-SiC Schottky contacts; Fabrizio Roccaforte; Silicon Carbide Device Fabrication
30: Impact of Post Deposition Annealing on SiO2/SiC Structures Formed by Plasma Nitridation of the SiC Surface; Hiroki Fujimoto; Silicon Carbide Device Fabrication
31: An Ohmic Contact for SiC-based P-channel HFET; Hiroyuki Sazawa; Silicon Carbide Device Fabrication
32: Qualitative study on laser backside ohmic contact formation of a SiC-Ni interface; Maurice Clair; Silicon Carbide Device Fabrication
33: Densification & Single Side Polishing application for improvement of high-level wafer warpage in SiC substrate.; Myeonggyun Kim; Silicon Carbide Device Fabrication
34: C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes; Roth Voo; Silicon Carbide Device Fabrication