Using optical excitation with tunable photon energy from 0.5-3.3 eV, we have performed a capacitance based spectroscopy study of the energetic distribution of border traps in a SiO2-SiC system. Persistent photo-capacitance effect was observed in MOS capacitors due to optical excitation of electrons from the border traps. By scanning the photon energy from infrared to ultraviolet, both the energy and the concentration of the border traps are probed. Our findings reveal a high concertation of trapped charges near the valence band edge, as well as a significant concentration of localized charges in the bandgap. These localized charges likely stem from the charge transition levels (CTL) of defect species within the oxide. Additionally, a model for the optical excitation is also discussed.