Name
Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC MOSFETs
Description
SiC MOSFETs were fabricated after proton irradiation of SiC epitaxial wafers, and the effects of proton irradiation on the electrical characteristics were experimentally investigated to demonstrate the improvement of recovery characteristics and suppression of bipolar degradation.
Speakers
Kumiko Konishi - Hitachi, Ltd.
Date
Thursday, October 3, 2024
Time
11:50 AM - 12:10 PM
Location Name
Room 306
Track
Radiation Effects & Superjunction