1: Automatic etch pit detection and characterization in KOH etch images of 4H-SiC using deep learning; Georg Holub; SiC Defect Characterization
2: Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide; Giovanni Alfieri; SiC Defect Characterization
3: Molecular Dynamics Simulation Approach to H2 Etching Process on SiC; Hidenori Saeki; SiC Defect Characterization
4: Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy; Kinga Kosciewicz; SiC Defect Characterization
5: All-Optical Volumetric Imaging of Killer Defects in a SiC Epilayer; Torben Lennart Purz; SiC Defect Characterization
6: How to simulate bipolar degradation by UV irradiation with high accuracy; Yasuyuki Igarashi; SiC Defect Characterization
7: Dependence of epi defects on surface preparation by plasma techniques.; Zareena Hassanbee; SiC Defect Characterization
8: Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET; Abdul Yeo Hannan; SiC Device Design and Characterization
9: Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench; Alessandro Borghese; SiC Device Design and Characterization
10: Fast high current sensing SMD resistor network layout for low inductance insertion; Antxon Arrizabalaga; SiC Device Design and Characterization
11: Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension; Kamil Kotra; SiC Device Design and Characterization
12: Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations; Luca Maresca; SiC Device Design and Characterization
13: Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs; Saeed Jahdi; SiC Device Design and Characterization
14: Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET; Servin Rathi; SiC Device Design and Characterization
15: Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope; Tatsuhiro Nagasaka; SiC Device Design and Characterization
16: DFT analysis on the electronic structure of 4H-SiC/SiO2 after NO annealing; Tomoya Ono; SiC Device Design and Characterization
17: A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application; Xiaofan Ma; SiC Device Design and Characterization
18: 1200 V 4H-SiC VDMOSFET Having >2.5x On-Current Improvement; Yuniarto Widjaja; SiC Device Design and Characterization
19: Performance Enhancement of Cu2O/SiC Heterostructured Diodes; Hyun-Woo Lee; SiC Material Growth
20: Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material; Jeffrey Gum; SiC Material Growth
21: Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures; Ji-Soo Choi; SiC Material Growth
22: Progress in etching methods of SiC wafer; Jungmin Lee; SiC Material Growth
23: High-quality SiC crystal growth by the control of cooldown rate at cooling stage; Lee Chae-Young; SiC Material Growth
24: Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies; Marshall Wilson; SiC Material Growth
25: Innovative SiC coating for protection graphite reactor components in SiC semiconductor processing; Matthias Trempa; SiC Material Growth
26: Research Progress on the SiC Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues; Peng Gu; SiC Material Growth
27: High Removal Rate Silicon Carbide (SiC) Slurry; Sridevi Alety; SiC Material Growth
28: Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers; Wendong Song; SiC Material Growth
29: Kinematical parameters determining the nitrogen doping uniformity during physical vapor transport growth of 4H-SiC crystals; Yuta Inoue; SiC Material Growth
30: Unclamped Inductive Switching in SiC MOSFETs and Diodes: Implications for Standards, Testing, and Screening; Davood Momeni; SiC Packaging, Reliability and Systems
31: On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide; Holger Schlichting; SiC Packaging, Reliability and Systems
32: Life prediction of SiC-MOSFET by accelerated test using anode hole injection correction; Koichi Endo; SiC Packaging, Reliability and Systems
33: Optimization of Gate Oxide Screening Technology for Commercial SiC discrete MOSFETs and Power Modules; Limeng Shi; SiC Packaging, Reliability and Systems
34: Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates; Mohamed Alaluss; SiC Packaging, Reliability and Systems
35: Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs; Monikuntala Bhattacharya; SiC Packaging, Reliability and Systems
36: Extrinsic Gate Reliability of SiC MOSFETs; Rishi Kupper; SiC Packaging, Reliability and Systems
37: Prospects and Challenges for SiC Power Devices in MMC-VSC Applications; Saeed Jahdi; SiC Packaging, Reliability and Systems
38: Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃; Vuong Van Cuong; SiC Packaging, Reliability and Systems
39: Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure; Kentaro Onishi; SiC Quantum Properties and Applications
40: Near Field Spectroscopy of Silicon Carbide Nanosheets for Novel Application; Nishan Shrestha; SiC Quantum Properties and Applications
41: Polarization control of SiO2/SiC interfacial single-photon sources by oxygen pressure during thermal oxidation; Rinku Oyama; SiC Quantum Properties and Applications
42: Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide; Seung-Jae Hwang; SiC Quantum Properties and Applications
43: Impurity-vacancy complexes in 4H-SiC: stability and properties; Takuma Kobayashi; SiC Quantum Properties and Applications
44: Study of SiC trench etching characteristics for different crystal planes; Akhil Ranjan; Silicon Carbide Device Fabrication
45: Analysis of mechanical properties of 4H-SiC 6 inch wafers by nanoindentation test; Brunella Cafra; Silicon Carbide Device Fabrication
46: Grind performance improvement study for SiC; Byungyoon An; Silicon Carbide Device Fabrication
47: Formation of structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing; Carsten Hellinger; Silicon Carbide Device Fabrication
48: Analysis of SiO2 Mask Shape Effect on SiC Trench Deformation in Biased SF6/O2 Inductively Coupled Plasma; Daria Zimina; Silicon Carbide Device Fabrication
49: High mobility SiC MOSFETs using an oxidation-minimizing process; Koushik Ramadoss; Silicon Carbide Device Fabrication
50: Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs; Sami Bolat; Silicon Carbide Device Fabrication
51: Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime; Tom Becker; Silicon Carbide Device Fabrication
52: Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET; Vuong Van Cuong; Silicon Carbide Device Fabrication
53: Rapid thermal anneal with conductive heating for SiC wafers processing; Xavier Pages; Silicon Carbide Device Fabrication