Medium-voltage (MV) power conversion systems (>3.3 kV) are currently limited to low switching frequencies of several hundred hertz or below due to losses in solid-state switches and diodes. The existing wide-bandgap solutions for MV-class switches and diodes are limited due to the lack of availability of high-quality uniformly doped SiC thick epitaxial layers with low defect concentration. Additionally, SiC unipolar switches and diodes rated >3.3kV suffer from high conduction losses at elevated temperatures. SiC superjunction (SJ) devices promise the best performance at >3.3 kV, with lower conduction loss at elevated temperatures. To date, 1.2–3.3 kV multi-epitaxial SiC SJ devices have been demonstrated [1-2]. Fabricating such devices by conventional ion implantation of dopants requires many iterations of epi regrowth due to the shallow depth of conventionally implanted atoms in SiC. GE Aerospace is currently exploring a novel third fabrication architecture for >3.3 kV device using ultra-high energy implantation (UHEI) and epitaxial overgrowth. This technology is based on successful development of charge-balanced (CB) devices, an intermediate structure between conventional and superjunction designs [3-4] . Recently, the team demonstrated the world’s first 3.5 kV SiC SJ deep implanted junction barrier Schottky (JBS) diodes (Fig.1) and the world’s first 5kV SiC SJ deep implanted MOSFETs (Fig.3). Deep-implanted SJ devices are formed through a small number of thick (12 µm each) epitaxial overgrowths. After each overgrowth, 12 µm deep high energy implants form P-doped and N-doped pillars extending through the full epilayer. Fig. 2 shows the resulting SJ-JBS diode has Ron,sp of 4.5 mΩ·cm2 at room temperature and 9.6 mΩ·cm2 at 150°C, which is ~45% below the SiC unipolar limit. The breakdown voltage is 3.8 kV with a low leakage prior to breakdown. The conduction and blocking characteristics of the 5kV deep implanted SJ MOSFET are plotted in Fig. 4. Ron,sp at room temperature is 9mΩ·cm², which is 25% below the SiC unipolar drift region limit. The device demonstrates a sharp and stable avalanche breakdown voltage at 5.1kV and leakage current density of <10µA/cm² below 4kV. To fully recover defects following UHEI, deep implanted SJ devices need to undergo a high temperature activation anneal at 2000 °C; devices receiving only a conventional activation anneal at 1700 °C exhibit high leakage (Fig.5) [5]. Fig.6 is a comparison between GE‘s CB and deep implanted SJ devices and the SiC unipolar entitlement showing a scalable path toward realization of more efficient MV converters.