We present a numerical exploration of the trade-off between specific on-resistance and breakdown voltage in silicon carbide superjunction (SJ) devices along the [0001] crystal orientation, spanning from full-SJ structures to hybrid configurations that integrate SJ and non-SJ layers (semi-SJ structures). In semi-SJ devices, where the SJ layer is thinner than the optimized thickness required for full-SJ devices to maintain a given breakdown voltage, performance falls short of that achieved by full-SJ devices. Systematic analysis of the performance against the thickness of the SJ layer also reveals a shift in the breakdown path. While full-SJ devices experience breakdown via a peak electric field at the interface of n- and p-pillars by the anisotropic impact ionization process, the path parallel to [0001] through the center of the p-pillar is responsible for breakdown as the thickness of the SJ layer decreases. The path switching in semi-SJ devices is intriguingly attributed to the reduced electric field at the interface compared to their full-SJ counterparts, stemming from the lower doping density of the SJ layer. Quantitative analysis offers insights into the transitional performance accompanied by the shift of the breakdown path from full- to semi-SJ devices.