High-energy electron irradiation on MOSFETs can improve the reverse recovery characteristics of body-pin diodes because the point defects created in the drift layer shorten the carrier lifetime. However, it is known that electron irradiation causes an increase in the on-resistance of MOSFETs and a negative threshold voltage shift. In this study, we analyze electron-irradiated SiC power MOSFETs, focusing on their effects on the drift layer resistance and MOS channel characteristics such as the threshold voltage, subthreshold swing, and transconductance.