Spin defects in wide bandgap semiconductor attract attention for quantum technologies since they act as quantum bit (qubit) and quantum sensor. Negatively charged silicon vacancy (Vsi) is known as a such quantum defect. For quantum sensing based on Vsi, optically detected magnetic resonance (ODMR) of the ground state is used for magnetic field sensing. However, ODMR of the excited state is applied for temperature measurement because the ground state ODMR does not have any temperature dependence. In our previous study, temperature sensing at a local area in a SiC pn diode has been demonstrated using Vsi created by Particle Beam Writing (PBW) technique. In addition, Yamazaki et al. developed the simultaneous resonated optically detected magnetic resonance (SRODMR) method by which the sensitivity of temperature sensing is improved. Since temperature at local areas in devices is important to understand the health of devices, Vsi locally created in SiC devices by PBW can be applied to a tool for the diagnosis of SiC devices. Of course, other information such as electrical current and electric field as well as temperature are required to establish a diagnosis methodology for SiC devices. In this study, we simultaneously measure magnetic field induced by electrical current and temperature in local areas in SiC devices. The sample used in this study has a structure consisting of an aluminum (Al) line formed on an oxide layer on 4H-SiC. Using PBW (0.6 MeV-He ions), irradiation spots were formed near the Al line. For the magnetic field, the results obtained from the experiment well agree with the results obtained by calculation. For temperature, the value for all dots is around 315 K and no significant difference between each peak was observed. This indicates that temperature slightly increases by electrical current, but temperature gradient is not observed.