1: Novel Catalyst-Referred Etching Technology for Preparing Epi-Ready Silicon Carbide Substrates; Ara Philipossian; SiC Defect Characterization
2: Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation; Atsushi Shimbori; SiC Defect Characterization
3: Carbon vacancy in commercial junction barrier Schottky diodes; Francis Ling; SiC Defect Characterization
4: Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET; Hiroki Niwa; SiC Defect Characterization
5: Clustering tendencies of C atoms in SiO2 matrix with different O-containing conditions: molecular dynamics study with a universal neural network potential; Hiroki Sakakima; SiC Defect Characterization
6: Determining Compensation of Implanted Aluminum Dopants in 4H-SiC by Simultaneous Fitting of Charge Carrier Concentration and Mobility; Julian Kauth; SiC Defect Characterization
7: High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates; Maëlle Le Cunff; SiC Defect Characterization
8: A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy; Michael Elko; SiC Defect Characterization
9: Doping dependent electronic and kinetic properties of dislocations in 4H silicon carbide; Rong Wang; SiC Defect Characterization
10: DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation; Tingqiang Yang; SiC Defect Characterization
11: Influence of substrate quality for SiC Bipolar Degradation at high current levels; Wolfgang Bergner; SiC Defect Characterization
12: Threading Dislocation Behavior in the Facet Region of PVT-Grown 4H-SiC Crystals; Yafei Liu; SiC Defect Characterization
13: Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation; Zeyu Chen; SiC Defect Characterization
14: Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs); Ben Sekely; SiC Device Design and Characterization
15: Stress fields distribution and simulation in 3C-SiC (111) resonators; Francesco La Via; SiC Device Design and Characterization
16: Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration; Gyuhyeok Kang; SiC Device Design and Characterization
17: Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs; Ivana Kovacevic-Badstuebner; SiC Device Design and Characterization
18: TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET; Jieun Lee; SiC Device Design and Characterization
19: Design Optimization of a 6.5 kV Split-Gate p-Channel 4H-SiC IGBT; Kuan-Min Kang; SiC Device Design and Characterization
20: Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method; Kuo-Ting Chu; SiC Device Design and Characterization
21: SiC for sensing in harsh environments: status, new efforts.; Marc Portail; SiC Device Design and Characterization
22: A Novel all-SiC Neural Interface: In-vivo Performance; Matthew Melton; SiC Device Design and Characterization
23: The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery; Saeed Jahdi; SiC Device Design and Characterization
24: Characterization of SiC trenches using innovative 3D CDSEM; Shunit Petachia Halely; SiC Device Design and Characterization
25: Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET; Shunto Higashi; SiC Device Design and Characterization
26: Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET; Zhaowen He; SiC Device Design and Characterization
27: Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC Epitaxy; Alex Galyukov; SiC Material Growth
28: Nitrogen Dopant Incorporation into epitaxial 4H-SiC: Influence of Chemical Vapor Deposition Growth Parameters and Materials; Alexander Schrader; SiC Material Growth
29: Investigation on the CTE matching of graphite substrates and TaC coating; Bowen Dong; SiC Material Growth
30: Development of a novel warpage control method for epi-ready 4H-SiC wafers by depositing homoepitaxial layers on both Si- and C-faces; Daichi Dojima; SiC Material Growth
31: Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates; Hitesh Jayaprakash; SiC Material Growth
32: 3C-SiC on Si substrates by Si and C multilayers transformation; Joerg Pezoldt; SiC Material Growth
33: Partial dislocation-induced surface irregularities observed on 4H-SiC homoepitaxial layers; Koki Kitahara; SiC Material Growth
34: Controlled domain in 3C-SiC epitaxial growth on off-oriented 4H-SiC substrate for water splitting; Kongshik Rho; SiC Material Growth
35: Homoepitaxy of 4H-SiC on a-plane substrates; Robin Karhu; SiC Material Growth
36: Influence of Deposition Techniques on the Electrical properties and Deep level Defect of Ga2O3/SiC heterojunction diode; Seung-Hwan Chung; SiC Material Growth
37: Submicron Diamond Slurry for Polishing Silicon Carbide Wafers; Timothy Dumm; SiC Material Growth
38: A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects; Yuki Urata; SiC Material Growth
39: Highly spatially resolved photoluminescence characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals; Yuzo Takeda; SiC Material Growth
40: SiC half-bridge modules to improve efficiency and reduce area of high-power motor drives in space; Antxon Arrizabalaga; SiC Packaging, Reliability and Systems
41: Development and Demonstration of a High Temperature and High Performance Dual Side Cooling SiC Power Module for Automotive Application; Gongyue Tang; SiC Packaging, Reliability and Systems
42: BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC; Hannan Yeo; Silicon Carbide Device Fabrication
43: Argon plasma treatment of 4H-SiC surface before nickel ohmic contacts formation by UV laser annealing; Jean-François Michaud; Silicon Carbide Device Fabrication
44: Formation of highly doped and defect-free p-type junctions in SiC by using high temperature implants and UV-Laser Annealing; Louis Thuries; Silicon Carbide Device Fabrication
45: Proton implantation into substrate and stacking faults in epitaxial layers; Masashi Kato; Silicon Carbide Device Fabrication
46: Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification; Patrick Fiorenza; Silicon Carbide Device Fabrication
47: Trench Etch Processing for SiC Superjunction Schottky Diodes; Qinze Cao; Silicon Carbide Device Fabrication
48: ITO/4H-SiC Schottky contacts for UV applications; Razvan Pascu; Silicon Carbide Device Fabrication
49: Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on SiC; Sandra Krause; Silicon Carbide Device Fabrication
50: Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking capability; Sangyeob Kim; Silicon Carbide Device Fabrication
51: Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser; Shuzo Masui; Silicon Carbide Device Fabrication
52: TCAD Model for Thermal Oxidation of 4H-SiC; Tamara Fidler; Silicon Carbide Device Fabrication
53: Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC; Zeinab Chehadi; Silicon Carbide Device Fabrication