Biography

Sei-Hyung Ryu received his B.S. degree in Electronics Engineering in February 1992 from Seoul National University, and M.S. and Ph.D. degrees in Electrical and Computer Engineering in December 1993 and in May 1997, respectively, from Purdue University, where he developed the first P-well CMOS technology in 6H-SiC for smart power applications. In 1999, he joined Cree, Inc. (now Wolfspeed, Inc.), where he has been developing novel device structures in 4H-SiC. His current research focuses on high performance power devices including JBS diodes, power MOSFETs, high voltage IGBTs, GTO thyristors, and PiN diodes. He is currently serving as Director of Research Science at Wolfspeed, leading a team of experts in Device Design, Physics, and Modeling (TCAD and SPICE). He has authored 4 book chapters, more than 234 papers, and 81 issued patents. He is a Fellow of IEEE.