Biography

Dr. Peter Friedrichs was born in 1968 in Aschersleben, Germany. After achieving his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993, he started Ph.D work at the Fraunhofer Institut FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC power MOSFETs. In 1996 he joined the Corporate Research of Siemens AG and was involved in the development of power switching devices on SiC, mainly power MOSFETs and vertical junction FETs. On March 1st, 2000, Dr. Peter Friedrichs joined SiCED GmbH & Co. KG, a joint venture of Siemens and Infineon that originated from the former Siemens research group. Starting in July 2004, he was the managing director of SiCED, responsible for all technical issues. In 2009 Dr. Friedrichs achieved the Dipl.-Wirt.-Ing. from the University of Hagen. After the integration of SiCED’s activities into Infineon, he joined Infineon as Senior Director Silicon Carbide from April 1st, 2011, and is now Vice President of SiC at Infineon Technologies. 

Dr. Friedrichs is a member of the ECPE board and acts as co-chair for the JEDEC JC70.2 committee. He holds numerous patents in the field of SiC power devices and technology and is an author or co/author of more than 50 scientific papers and conference contributions.