Biography

Prof. Anant Agarwal joined the ECE Dept. at OSU in 2017.  Previously, he was Senior Advisor for Wide Band Gap semiconductors at the US DoE where he helped create and manage four programs (worth $125M) related to WBG technology and their applications including PowerAmerica, Next Generation of Electric Machines (I and II), and Graduate Traineeships.  His leadership at DoE has driven the manufacturing and adoption of wide band gap devices in the US and has put US in a leadership position. From 1999 to 2013, he was R&D Manager for Silicon Carbide power devices at Cree Inc. where he developed and transferred to manufacturing SiC power diodes and MOSFETS in the 600 V to 1700 V range. From 1990-1999, he was a Fellow at Northrop Grumman Science and Technology Center, Pittsburgh. He was elected an IEEE Fellow in 2012 for his lifetime contributions to Wide Band Gap technologies. His lifetime goal has been to successfully commercialize WBG power devices and resurrect the US domestic power electronics industry while educating the next generation of researchers.